Realizing tight-binding Hamiltonians using site-controlled coupled cavity arrays.

Analog quantum simulators rely on programmable and scalable quantum devices to emulate Hamiltonians describing various physical phenomenon. Photonic coupled cavity arrays are a promising alternative platform for realizing such simulators, due to their potential for scalability, small size, and high-temperature operability. However, programmability and nonlinearity in photonic cavities remain outstanding challenges. Here, using a silicon photonic coupled cavity array made up of [Formula: see text] high quality factor ([Formula: see text] up to[Formula: see text]) resonators and equipped with specially designed thermo-optic island heaters for independent control of cavities, we demonstrate a programmable photonic cavity array in the telecom regime, implementing tight-binding Hamiltonians with access to the full eigenenergy spectrum. We report a [Formula: see text] reduction in the thermal crosstalk between neighboring sites of the cavity array compared to traditional heaters, and then present a control scheme to program the cavity array to a given tight-binding Hamiltonian. The ability to independently program high-Q photonic cavities, along with the compatibility of silicon photonics to high volume manufacturing opens new opportunities for scalable quantum simulation using telecom regime infrared photons.

Non-volatile electrically programmable integrated photonics with a 5-bit operation.

Scalable programmable photonic integrated circuits (PICs) can potentially transform the current state of classical and quantum optical information processing. However, traditional means of programming, including thermo-optic, free carrier dispersion, and Pockels effect result in either large device footprints or high static energy consumptions, significantly limiting their scalability. While chalcogenide-based non-volatile phase-change materials (PCMs) could mitigate these problems thanks to their strong index modulation and zero static power consumption, they often suffer from large absorptive loss, low cyclability, and lack of multilevel operation. Here, we report a wide-bandgap PCM antimony sulfide (Sb2S3)-clad silicon photonic platform simultaneously achieving low loss (<1.0 dB), high extinction ratio (>10 dB), high cyclability (>1600 switching events), and 5-bit operation. These Sb2S3-based devices are programmed via on-chip silicon PIN diode heaters within sub-ms timescale, with a programming energy density of [Formula: see text]. Remarkably, Sb2S3 is programmed into fine intermediate states by applying multiple identical pulses, providing controllable multilevel operations. Through dynamic pulse control, we achieve 5-bit (32 levels) operations, rendering 0.50 ± 0.16 dB per step. Using this multilevel behavior, we further trim random phase error in a balanced Mach-Zehnder interferometer.

Ultra-low-energy programmable non-volatile silicon photonics based on phase-change materials with graphene heaters.

Silicon photonics is evolving from laboratory research to real-world applications with the potential to transform many technologies, including optical neural networks and quantum information processing. A key element for these applications is a reconfigurable switch operating at ultra-low programming energy-a challenging proposition for traditional thermo-optic or free carrier switches. Recent advances in non-volatile programmable silicon photonics based on phase-change materials (PCMs) provide an attractive solution to energy-efficient photonic switches with zero static power, but the programming energy density remains high (hundreds of attojoules per cubic nanometre). Here we demonstrate a non-volatile electrically reconfigurable silicon photonic platform leveraging a monolayer graphene heater with high energy efficiency and endurance. In particular, we show a broadband switch based on the technologically mature PCM Ge2Sb2Te5 and a phase shifter employing the emerging low-loss PCM Sb2Se3. The graphene-assisted photonic switches exhibited an endurance of over 1,000 cycles and a programming energy density of 8.7 ± 1.4 aJ nm-3, that is, within an order of magnitude of the PCM thermodynamic switching energy limit (~1.2 aJ nm-3) and at least a 20-fold reduction in switching energy compared with the state of the art. Our work shows that graphene is a reliable and energy-efficient heater compatible with dielectric platforms, including Si3N4, for technologically relevant non-volatile programmable silicon photonics.

Metasurface Integrated Monolayer Exciton Polariton.

Monolayer transition-metal dichalcogenides (TMDs) are the first truly two-dimensional (2D) semiconductor, providing an excellent platform to investigate light-matter interaction in the 2D limit. The inherently strong excitonic response in monolayer TMDs can be further enhanced by exploiting the temporal confinement of light in nanophotonic structures. Here, we demonstrate a 2D exciton-polariton system by strongly coupling atomically thin tungsten diselenide (WSe2) monolayer to a silicon nitride (SiN) metasurface. Via energy-momentum spectroscopy of the WSe2-metasurface system, we observed the characteristic anticrossing of the polariton dispersion both in the reflection and photoluminescence spectrum. A Rabi splitting of 18 meV was observed which matched well with our numerical simulation. Moreover, we showed that the Rabi splitting, the polariton dispersion, and the far-field emission pattern could be tailored with subwavelength-scale engineering of the optical meta-atoms. Our platform thus opens the door for the future development of novel, exotic exciton-polariton devices by advanced meta-optical engineering.